| 摘要 |
Disclosed is a capacitor of a semiconductor device, capable of varying a capacitance according to a design of the semiconductor device. The capacitor can include a first electrode area and a second electrode area with a dielectric therebetween. The first electrode area can have a metal electrode spanning the entire first electrode area. The second electrode area can include a plurality of metal electrodes connected to each other through thin bridge patterns. Internal pads can be arranged around the electrode areas and are connected to certain ones of the plurality of metal electrodes of the second electrode area in order to provide a voltage capable of melting or breaking certain ones of the thin bridge patterns. The capacitance of the capacitor arranged according to embodiments can be adjusted to a desirable level using the internal pads. Therefore, a designer can easily design the capacitor or change the design of the capacitor.
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