发明名称 |
FLOATING GATE WITH UNIVERSAL ETCH STOP LAYER |
摘要 |
Floating gates of a floating gate memory array have an inverted-T shape in both the bit line direction and the word line direction. Floating gates are formed using an etch stop layer that separates two polysilicon layers that form floating gates. Word lines extend over floating gates in one example, and word lines extend between floating gates in another example.
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申请公布号 |
US2009147576(A1) |
申请公布日期 |
2009.06.11 |
申请号 |
US20070951998 |
申请日期 |
2007.12.06 |
申请人 |
MATAMIS GEORGE;CHIEN HENRY;PURAYATH VINOD ROBERT;ORIMOTO TAKASHI WHITNEY;KAI JAMES |
发明人 |
MATAMIS GEORGE;CHIEN HENRY;PURAYATH VINOD ROBERT;ORIMOTO TAKASHI WHITNEY;KAI JAMES |
分类号 |
G11C16/04;H01L21/336 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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