发明名称 |
FLOATING BODY FIELD-EFFECT TRANSISTORS, AND METHODS OF FORMING FLOATING BODY FIELD-EFFECT TRANSISTORS |
摘要 |
In one embodiment, a floating body field-effect transistor includes a pair of source/drain regions having a floating body channel region received therebetween. The source/drain regions and the floating body channel region are received over an insulator. A gate electrode is proximate the floating body channel region. A gate dielectric is received between the gate electrode and the floating body channel region. The floating body channel region has a semiconductor SixGe(1_X)-comprising region. The floating body channel region has a semiconductor silicon-comprising region received between the semiconductor SixGe(1_X)-comprising region and the gate dielectric. The semiconductor SixGe(1_X)-comprising region has greater quantity of Ge than any quantity of Ge within the semiconductor silicon-comprising region. Other embodiments are contemplated, including methods of forming floating body field-effect transistors. |
申请公布号 |
WO2009055173(A3) |
申请公布日期 |
2009.06.11 |
申请号 |
WO2008US77027 |
申请日期 |
2008.09.19 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
LIU, JUN;LI, DI;VIOLETTE, MICHAEL, P.;MOULI, CHANDRA;KIRSH, HOWARD |
分类号 |
H01L21/335 |
主分类号 |
H01L21/335 |
代理机构 |
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地址 |
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