发明名称 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
摘要 A method for manufacturing a TFT-array substrate includes forming a first conductive pattern layer including a gate line, a gate electrode, and a lower gate pad electrode using a first mask, forming a channel and a second conductive pattern layer including a source electrode, a drain electrode, a data line, a data pad electrode, and a middle gate pad electrode using a second mask, and forming a third conductive pattern layer including a pixel electrode, an upper gate pad electrode, and an upper data pad electrode using a third mask. A TFT-array substrate includes crossing gate lines and data lines, TFTs formed at the crossings of gate lines and data lines, pixel electrodes formed in regions defined by the crossing gate lines and data lines, data pad electrodes connected to the data lines, and gate pad electrodes connected to the gate lines.
申请公布号 US2009146151(A1) 申请公布日期 2009.06.11
申请号 US20080327755 申请日期 2008.12.03
申请人 SVA OPTRONICS 发明人 SHEN QIQI
分类号 H01L31/18;H01L21/3205 主分类号 H01L31/18
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