ALN CRYSTAL AND METHOD FOR GROWING THE SAME

摘要

Disclosed is a method for growing an AlN crystal, which enables to stably grow an AlN crystal having large aperture and thickness. Specifically disclosed is a method for growing an AlN crystal, which comprises a step for preparing an SiC substrate (4) having a major surface (4m) wherein the density of micropipes (4mp) having a pipe diameter of not less than 1000 µm is 0 cm-2 and the density of micropipes (4mp) having a pipe diameter of not less than 100 µm but less than 1000 µm is not more than 0.1 cm-2, and a step for growing an AlN crystal (5) on the major surface (4m) by a vapor-phase process.