| 摘要 |
PROBLEM TO BE SOLVED: To provide a non volatile semiconductor storage device which has sufficient driving power and small scale driving circuits. SOLUTION: The non volatile semiconductor storage device comprises memory cells equipped with two terminal variable resistance elements, voltage applying means for applying a voltage between first terminals and second terminals of the variable resistance elements, and capacitors connected to first potential lines in which the first electrodes are connected to the second terminals and the second electrodes show predetermined voltages. The variable resistance elements are configured to connect both first and second terminals and the first potential lines, and the voltage applying means generates voltage of first polarity so that a first voltage which shows the first polarity can be applied to both terminals of the variable resistance elements and first electric charges for inducing a capacitor voltage which shows the first polarity can be stored in the capacitors. Therefore, both terminals of the variable resistance elements are configured to apply a second voltage which shows second polarity opposite to the first polarity by connecting the first terminals with the first potential lines when the first electric charges are stored in the capacitors. COPYRIGHT: (C)2009,JPO&INPIT |
