发明名称 |
SEMICONDUCTOR PRESSURE SENSOR, METHOD FOR PRODUCING THE SAME, SEMICONDUCTOR DEVICE, AND ELECTRONIC APPARATUS |
摘要 |
A semiconductor pressure sensor includes: a first substrate; a buried insulating film laminated on the first substrate; a second substrate laminated on the buried insulating film; a plurality of electrodes including a lower electrode and at least two upper electrodes, the lower electrode being formed on the second substrate; and a piezoelectric film laminated on the lower electrode and having the upper electrodes formed thereon. In the sensor, there is removed at least a portion of a region of the first substrate corresponding to a region of the second substrate including the piezoelectric film and the electrodes.
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申请公布号 |
US2009146230(A1) |
申请公布日期 |
2009.06.11 |
申请号 |
US20080328991 |
申请日期 |
2008.12.05 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
TAKIZAWA TERUO |
分类号 |
H01L29/84;G01L9/06;H01L21/34 |
主分类号 |
H01L29/84 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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