| 摘要 |
<p>A resist removal apparatus (1) with which a resist on a substrate can be removed at a temperature as low as up to 90°C. The resist removal apparatus (1) includes a chamber (2) in which a substrate (16) to be subjected to resist (17) removal is housed so as to be heatable and to which an unsaturated hydrocarbon gas or the gas of a fluorinated unsaturated hydrocarbon is supplied together with an ozone gas at a pressure lower than atmospheric pressure. The internal pressure of the chamber (2) is regulated so that the substrate (16) has a temperature of 90°C or lower. Examples of the ozone gas include an ultrahigh-concentration ozone gas obtained from an ozone-containing gas by separating out the ozone by liquefying the ozone only based on a difference in vapor pressure and then vaporizing the ozone again. It is preferable that in order to clean the substrate (16) which has undergone the treatment, ultrapure water be supplied thereto. The chamber (2) is equipped with a susceptor (15) for holding the substrate (16). The susceptor (2) is heated with a light source (4) which emits infrared light.</p> |
