INFRARED AVALANCHE PHOTODIODE STRUCTURE WITH LOW EXCESS NOISE AND ITS MANUFACTURING METHOD
摘要
<p>An avalanche photodiode structure for the infrared range is disclosed. The photodiode has an avalanche multiplication region (104) comprising InAs. By this means a low excess noise of the avalanche photodiode structure is achieved. A method of forming a mesa structure (150) from InAs is also disclosed.</p>
申请公布号
WO2009071916(A1)
申请公布日期
2009.06.11
申请号
WO2008GB04035
申请日期
2008.12.08
申请人
THE UNIVERSITY OF SHEFFIELD;TAN, CHEE HING;DAVID, JOHN;MARSHALL, ANDREW
