MEMORY CELL BASED ON METAL-INSULATOR TRANSITION(MIT) MATERIAL AND METHOD OF FABRICATING THE SAME MEMORY CELL

摘要

A memory cell based on metal-insulator transition material and a manufacturing method thereof are provided to prevent a property change of a VO2 thin film formed by a following process by using a switching device of a bottom gate mode. A silicon oxide film(115) is formed on a substrate(110). A gate electrode(120) is formed on the silicon oxide film. A gate insulation film(130) is formed on the silicon oxide film and the gate electrode. A source electrode(140) and a drain electrode(150) are formed on the gate insulation film. A MIT(Metal Insulator Transition) thin film(160) for switching is formed on the gate insulation film between the source electrode and the drain electrode. A MIT thin film(170) for resistance is formed on the drain electrode. A top electrode(180) is formed on the MIT thin film for resistance. A top insulation film(190) covers the source electrode, the drain electrode, and the MIT thin film for switching.