| 摘要 |
A NAND type flash memory and a memory system improving the reliability of data stored in a memory cell are provided to store data stored in a memory cell to the other memory cell according to a comparison result between data of the monitor cell and the expectation value. A block includes a memory cell, a source side SGT, a drain section SGT and monitor cells(1d, 1e). The memory cell stores data corresponding to the threshold voltage. The source side SGT is connected between the common source line and the memory cell. The drain section SGT is connected between the bit line and memory cell. The monitor cell has the same configuration as the memory cell. The threshold voltage of the monitor cell is set up according to data for monitor.
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