A1N CRYSTAL AND METHOD FOR GROWING THE SAME

摘要

Disclosed is a method for growing an AlN crystal, which enables to stably grow an AlN crystal having large aperture and thickness. Specifically discl osed is a method for growing an AlN crystal, which comprises a step for prep aring an SiC substrate (4) having a major surface (4m) wherein the density o f micropipes (4mp) having a pipe diameter of not less than 1000 .mu.m is 0 c m-2 and the density of micropipes (4mp) having a pipe diameter of not less t han 100 .mu.m but less than 1000 .mu.m is not more than 0.1 cm-2, and a step for growing an AlN crystal (5) on the major surface (4m) by a vapor-phase p rocess.