| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress the number of particles reaching a substrate during film formation for a film formation method of a film having lead zirconate titanate applied to an ferroelectric film, a piezoelectric film, or the like. <P>SOLUTION: In the film formation method, a film containing Pb, Zr, and Ti is formed by chemical vapor deposition using a raw material, containing a first organic metal raw material containing a metal complex of Pb and a first organic compound shown by (CH<SB>3</SB>)<SB>2</SB>CHCOCHCOCH(CH<SB>3</SB>)<SB>2</SB>, a second organic metal raw material containing a metal complex of Zr and a second organic compound shown by (CH<SB>3</SB>)<SB>2</SB>CHCOCHCOCH(CH<SB>3</SB>)<SB>2</SB>, and a third organic metal raw material containing a metal complex of Ti and a third organic compound. <P>COPYRIGHT: (C)2009,JPO&INPIT |
