| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photomask and a method for manufacturing the photomask capable of improving accuracy of a pattern to be transferred onto a photoresist film. <P>SOLUTION: A light-shielding pattern 15 is provided in a pattern formation inhibition region 19 and its circumference, the region where formation of an opening pattern is inhibited to prevent exposure light from intruding. The pattern formation inhibition region 19 is spread from an outer rim of a dicing region 13 to an outer rim of a region where, in an exposure apparatus, the light passing through inside a blind enters. The circumferential part of the pattern formation inhibition region 19 is provided to suppress global flare. A plurality of position accuracy measurement patterns 16 comprising openings are formed in the circumference of the pattern formation inhibition region 19 within a light-shielding zone 14. That is, the position accuracy measurement patterns 16 are formed in a part of the light-shielding pattern 15. The position accuracy measurement patterns 16 are simultaneously formed with a circuit pattern 12a and are used to measure the positional accuracy of the circuit pattern 12a. <P>COPYRIGHT: (C)2009,JPO&INPIT |
