ORGANIC FIELD-EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To provide an organic field-effect transistor. SOLUTION: The organic field-effect transistor has a gate insulating layer 4 including cured epoxy resin. Concentration of a trapping center 8 of the epoxy resin is lower as compared with a former epoxy resin whose trapping center is formed by a hydroxyl (OH) group. This lower concentration of the trapping center is achieved by reducing the number of OH groups over the whole layer and/or by reducing the number of OH groups in a surface region 9. COPYRIGHT: (C)2009,JPO&INPIT