| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus exhibiting high surface processing capability and high throughput. SOLUTION: Four reverse U shaped antennas 61 are disposed on a periphery of processing container 37 at every 90 degree. An AC power supply 62 is connected to each antenna 61 via a rectifier 63 and a DC voltage power supply 64 is connected between the antenna 61 and the AC power supply 62. A first magnet 66 is disposed at the center of each antenna 61, and a pair of second magnets 67, 67 are deposited at both ends of an antenna 61. The first magnet 66 and the pair of the second magnets 67, 67 are arranged such that an external force is applied perpendicularly to a longitudinal plasma current induced by the antenna 61. A plurality of circular ring shaped wafer holders 55 for holding the wafer 1 from below are arranged in a boat 50. Hereby, a high plasma flow is generated and a flow of particles is guided in a wafer surface direction to enable high flux plasma to flow in between the wafers. This achieves high surface processing capability. COPYRIGHT: (C)2009,JPO&INPIT
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