| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for acquiring different desired thresholds between a pMOSFET and an nMOSFET. SOLUTION: A first metal-containing layer 9 is formed on a first gate electrode layer and a second gate electrode layer, and a film 10 containing a photosensitive organic film is formed at the upper part of the first metal-containing layer, and a film containing the photosensitive organic film positioned at the upper part of the first gate electrode layer is selectively removed to expose the section of the first metal-containing layer, which is positioned at the upper part of the first gate electrode layer, and a second metal-containing layer 19 is formed on a film containing the photosensitive organic film and the first metal-containing layer, and metal contained in the first metal-containing layer and the second metal-containing layer and the second gate electrode layer are made to react by heating treatment to alloy the second gate electrode layer, and metal contained in the first metal-containing layer and the second gate electrode layer are made to react by heating treatment to alloy the second gate electrode layer. COPYRIGHT: (C)2009,JPO&INPIT
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