| 摘要 |
PROBLEM TO BE SOLVED: To increase the number of rewritings by preventing an accumulation of a charge trapping. SOLUTION: A memory cell MC includes: a semiconductor substrate 10; a first gate insulating layer 11 formed on the semiconductor substrate; a floating gate 12 formed on the semiconductor substrate 10 through the first gate insulating layer 11; a second gate insulating layer 13 formed on the floating gate 12; and a control gate 14 formed on the floating gate 12 through the second gate insulating layer 13. The memory cell arrays are composed by arranging the memory cell MC in a plurality of matrix shapes. The first gate insulating layer 11 is a first cavity layer. COPYRIGHT: (C)2009,JPO&INPIT
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