| 摘要 |
A method for manufacturing a semiconductor device includes a gate dielectric film formed over an active area of a semiconductor substrate, and a gate electrode formed over the gate dielectric film and formed of a silicidation film having a polysilicon area at the bottom of the gate electrode. Therefore, with embodiments, a work function can variously controlled and the gate pattern having different work function can be applied to the transistors by using a non-silicided polysilicon region due to the formation a partially silicided gate pattern, such that the resistance of the gate electrode and junction can be reduced, making it possible to maximize the device characteristics.
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