发明名称 PRODUCING SOI STRUCTURE USING HIGH-PURITY ION SHOWER
摘要 Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.
申请公布号 US2009149001(A1) 申请公布日期 2009.06.11
申请号 US20090369485 申请日期 2009.02.11
申请人 CORNING INCORPORATED 发明人 CITES JEFFREY SCOTT;GADKAREE KISHOR PURUSHOTTAM;MASCHMEYER RICHARD ORR
分类号 H01L21/762 主分类号 H01L21/762
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