| 摘要 |
A method for separating a semiconductor device is provided to prevent a specific flash memory cell from being erased by performing an ion implantation process around a gully of an insulator to fill the trench. An oxide film, a nitride film, and an insulating film are deposited on a silicon substrate(10) and are selectively etched. A trench is formed by etching the silicon substrate by using the selectively etched insulating film as a mask. The oxide film around the trench is wet-etched. The trench is filled with an insulator(60) by oxidizing the trench part. After the insulator and the insulating film are planarized, the remaining insulating film, nitride film, and oxide film are removed. A local ion implantation process is performed around a side surface of the insulator remaining in the trench.
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