| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a polycrystalline Si layer used for manufacturing a TFT of a polycrystalline Si, or a polycrystalline Si device containing the polycrystalline Si layer. SOLUTION: The method of forming the polycrystalline Si thin film includes: (A) preparing a substrate 10, (B) forming an amorphous Si layer 11 on the substrate, (C) mounting at least a sheet of metal layer 12 thereon to form a stacked layer, (D) irradiating light to the stacked layer to form a polycrystalline Si layer 15 from the amorphous Si layer, and (E) obtaining a polycrystalline Si layer by removing the metal plate. The rapid thermal annealing (RTA) process is applied to the light irradiation process of the step (D) for reducing heating time. The transformation of light to heat by the metal plate is further performed for the amorphous silicon layer to execute a rapid thermal crystallization. Thus, the polycrystalline Si layer is provided. COPYRIGHT: (C)2009,JPO&INPIT |
