| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of polishing a common interlayer insulating film, without leaving level differences among different types of transistors formed on an identical substrate. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of forming a plurality of different types of transistors on the identical semiconductor substrate (a step S1); forming the interlayer insulating film above these transistors (a step S2); etching the exposed region by forming a photoresist pattern, exposing each region having the different surface height of the interlayer insulating film from the semiconductor substrate (a step S3); and planarizing the interlayer insulating film by chemical mechanical polishing (a step S4). COPYRIGHT: (C)2009,JPO&INPIT |
