LATERAL MOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a lateral MOS transistor in which centralization of electric field in the voltage resistance characteristic in the source electrode side of locos oxide film has been relaxed, and to also provide a method of manufacturing the same transistor. SOLUTION: The lateral MOS transistor is provided with a substrate 100, an n-type active layer 101, an n-type drift layer 101a, a locos oxide film 102, an n-type well region 103, a p-type body diffusing layer 104, a gate oxide layer 105, a gate polyside electrode 106, an n+type drain region 107, an n+type source region 108, a p+type substrate electrode 109, and a p+type diffusion layer 110. The p+type diffusion layer 110 is formed in the region neighboring a first end part 102a in the source region side of the Locos oxide layer 102 and is doped with an impurity having conductivity type that is reverse to that of the n-type active layer 101. Accordingly, excess carriers generated in the region near the first end part 102a are cancelled, the carrier concentration is optimized, and the voltage resistance characteristics at the region near the first end part 102a is relaxed. COPYRIGHT: (C)2009,JPO&INPIT