CIRCUIT MEMBER, MANUFACTURING METHOD OF THE CIRCUIT MEMBER, AND SEMICONDUCTOR DEVICE INCLUDING THE CIRCUIT MEMBER

摘要

A circuit member 20 includes a lead frame material 1 having a die pad 3, a lead part 6 to be electrically connected with a semiconductor chip 30, and an outer frame 2 configured to support the die pad and the lead part. The lead frame material includes a resin sealing region 9. Roughened faces 10A to 10C and 11A to 11C, each having an average roughness Ra of 0.3 mum or greater, are formed on a surface in the resin sealing region of the lead frame material. The surface of the lead frame material except for the resin sealing region is a flat and smooth face. A two-layer plated layer 12A formed by laminating a Ni plated layer 13 and a Pd plated layer 14 in this order or a three-layer plated layer 12B formed by laminating the Ni plated layer 13, the Pd plated layer 14 and an Au plated layer 15 in this order is formed on the whole surface of the lead frame material.