发明名称 |
Semiconductor Device formed in a Recrystallized Layer |
摘要 |
A semiconductor device includes a substrate that includes a first layer and a recrystallized layer on the first layer. The first layer has a first intrinsic stress and the recrystallized layer has a second intrinsic stress. A transistor is formed in the recrystallized layer. The transistor includes a source region, a drain region, and a charge carrier channel between the source and drain regions. The second intrinsic stress is aligned substantially parallel to the charge carrier channel.
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申请公布号 |
US2009146146(A1) |
申请公布日期 |
2009.06.11 |
申请号 |
US20090368122 |
申请日期 |
2009.02.09 |
申请人 |
KNOEFLER ROMAN;TILKE ARMIN |
发明人 |
KNOEFLER ROMAN;TILKE ARMIN |
分类号 |
H01L29/78;H01L21/20;H01L29/04 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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