SINGLE ELECTRON TRANSISTOR HAVING CONSTRICTION BARRIER AND FABRICATION METHOD OF THE SAME

摘要

A single electron transistor including a constriction barrier and a manufacturing method thereof are provided to implement a tunneling barrier by forming a constriction barrier in an active region in both sides of a control gate. A channel region(12a) is defined as the predetermined micro pattern in a silicon layer(10) of an SOI substrate. A source region(24) and a drain region(26) are separated with a predetermined distance while interposing a channel region. A gate insulating layer is formed in the upper part of the channel region. The gate is formed in the upper part of the gate insulating layer. A channel constriction oxide layer(72) is self-aligned in both sides of the gate. The channel constriction oxide layer encroaches on the channel region.