| 摘要 |
<p>A semiconductor device is provided with a plurality of nonvolatile memory elements formed on a P well (PW); a decoder, which is formed on a well for a high voltage separated from the P well (PW) and can select some discretionary memory elements from the nonvolatile memory elements; and a plurality of terminals connected to the nonvolatile memory elements, which are selected by the decoder, through selection switch thereof. A large-scale TEG, which is composed of the nonvolatile memory elements including an element of which a threshold value has negative characteristics, can be evaluated.</p> |
