发明名称 |
APPARATUS FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL |
摘要 |
<p>This apparatus for manufacturing a semiconductor single crystal includes: a crucible; a heater; a crucible driving unit; a chamber for housing the crucible and the heater; and a hydrogen mixed gas supplying device for supplying into the chamber a hydrogen mixed gas including an inert gas in admixture with a hydrogen-containing gas that contains hydrogen atoms, wherein the hydrogen mixed gas supplying device includes: a hydrogen-containing gas supply unit; an inert gas supply unit; a hydrogen-containing gas flow rate controller; an inert gas flow rate controller; and a gas mixing unit for uniformly mixing together the hydrogen-containing gas and the inert gas so as to form a hydrogen mixed gas.</p> |
申请公布号 |
EP1895028(A4) |
申请公布日期 |
2009.06.10 |
申请号 |
EP20050811659 |
申请日期 |
2005.12.02 |
申请人 |
SUMCO CORPORATION |
发明人 |
SUGIMURA, WATARU;HOURAI, MASATAKA;ONO, TOSHIAKI |
分类号 |
C30B29/06;C30B15/20 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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