发明名称 POLYCRYSTALLINE SILICON PROCESS
摘要 FIELD: chemistry. ^ SUBSTANCE: invention can be used in chemical and electronic industry. Polycrystalline silicon is produced by hydrogen reduction of silicone rod trichlorosilane. Exhaust gas-vapour mixture is condensed with hydrogen recirculation following absorption treating. Condensation involves grading as containing trichlorosilane delivered to the process top. Distillation residue containing polysilane chlorides 5 - 10% and 90 - 95% silicon tetrachloride is delivered to hydrogenation in a hydrogenation reactor to produce trichlorosilane reduced to silicon with increasing process temperature to 1100 - 1200C and specified molar ratio of hydrogen to chlorosilanes as (6-12):1. The prepared exhaust gas-vapour mixture is cooled to produce silicon tetrachloride and trichlorosilane thereafter delivered back to the silicone process stage. ^ EFFECT: cost reduction of polycrystalline silicon process due to trichlorosilane generation in hydrogenation of waste silicon tetrachloride and polysilane chlorides. ^ 3 cl, 1 dwg
申请公布号 RU2357923(C2) 申请公布日期 2009.06.10
申请号 RU20070125995 申请日期 2007.07.09
申请人 FEDERAL'NOE GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE "GORNO-KHIMICHESKIJ KOMBINAT" 发明人 GAVRILOV PETR MIKHAJLOVICH;REVENKO JURIJ ALEKSANDROVICH;MURAVITSKIJ STEPAN ALEKSANDROVICH;GROMOV GENNADIJ NIKOLAEVICH;BOLGOV MIKHAIL VIKTOROVICH;LEVINSKIJ ALEKSANDR IVANOVICH;GUSHCHIN VLADIMIR VASIL'EVICH;PROCHANKIN ALEKSANDR PETROVICH
分类号 C01B33/03;C01B33/035 主分类号 C01B33/03
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