发明名称 |
POLYCRYSTALLINE SILICON PROCESS |
摘要 |
FIELD: chemistry. ^ SUBSTANCE: invention can be used in chemical and electronic industry. Polycrystalline silicon is produced by hydrogen reduction of silicone rod trichlorosilane. Exhaust gas-vapour mixture is condensed with hydrogen recirculation following absorption treating. Condensation involves grading as containing trichlorosilane delivered to the process top. Distillation residue containing polysilane chlorides 5 - 10% and 90 - 95% silicon tetrachloride is delivered to hydrogenation in a hydrogenation reactor to produce trichlorosilane reduced to silicon with increasing process temperature to 1100 - 1200C and specified molar ratio of hydrogen to chlorosilanes as (6-12):1. The prepared exhaust gas-vapour mixture is cooled to produce silicon tetrachloride and trichlorosilane thereafter delivered back to the silicone process stage. ^ EFFECT: cost reduction of polycrystalline silicon process due to trichlorosilane generation in hydrogenation of waste silicon tetrachloride and polysilane chlorides. ^ 3 cl, 1 dwg |
申请公布号 |
RU2357923(C2) |
申请公布日期 |
2009.06.10 |
申请号 |
RU20070125995 |
申请日期 |
2007.07.09 |
申请人 |
FEDERAL'NOE GOSUDARSTVENNOE UNITARNOE PREDPRIJATIE "GORNO-KHIMICHESKIJ KOMBINAT" |
发明人 |
GAVRILOV PETR MIKHAJLOVICH;REVENKO JURIJ ALEKSANDROVICH;MURAVITSKIJ STEPAN ALEKSANDROVICH;GROMOV GENNADIJ NIKOLAEVICH;BOLGOV MIKHAIL VIKTOROVICH;LEVINSKIJ ALEKSANDR IVANOVICH;GUSHCHIN VLADIMIR VASIL'EVICH;PROCHANKIN ALEKSANDR PETROVICH |
分类号 |
C01B33/03;C01B33/035 |
主分类号 |
C01B33/03 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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