| 发明名称 |
Siliziumcarbidhalbleitervorrichtung und Verfahren zu deren Herstellung |
| 摘要 |
<p>A channel layer (40) for forming a portion of a carrier path between a source electrode (100) and a drain electrode (110) is formed on a drift layer (30). The channel layer (40) includes Ge granular crystals formed on the drift layer (30), and a cap layer covering the Ge granular crystals.</p> |
| 申请公布号 |
DE112007001860(T5) |
申请公布日期 |
2009.06.10 |
| 申请号 |
DE20071101860T |
申请日期 |
2007.08.07 |
| 申请人 |
JAPAN FINE CERAMICS CENTER, NAGOYA;TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
SEKI, AKINORI;TANI, YUKARI;SHIBATA, NORIYOSHI |
| 分类号 |
H01L29/78;H01L21/336;H01L29/16 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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