Method for manufacturing integrated circuit, involves forming insulation layer with multiple contact elements, where another insulation layer is formed on former insulation layer
摘要
<p>The method involves forming an insulation layer with multiple contact elements. Another insulation layer is formed on the former insulation layer. The material of the former insulation layer is differentiated from the material of the latter insulation layer. Trenches are formed inside the latter insulation layer above the contact elements and are filled with a resistance change material. An independent claim is included for an integrated circuit with multiple memory cells.</p>
