发明名称 CRITICAL DIMENSION CONTROL USING FULL PHASE AND TRIM MASKS
摘要 To print sub-wavelength features on a wafer, a mask set including a full phase PSM (FPSM) and a corresponding trim mask can be used. Phase assignments on the FPSM can result in some feature definition with the trim mask, particularly in non-critical areas. Unfortunately, this limited feature definition can cause significant critical dimension (CD) variations in these non-critical areas. Undesirable critical dimension (CD) variations can be better controlled, even with substantial mask misalignment, by defining multiple feature edge portions with the trim mask in non-critical areas, such as T-intersections, elbows, and other types of intersecting lines.
申请公布号 EP1478976(B1) 申请公布日期 2009.06.10
申请号 EP20030719318 申请日期 2003.02.25
申请人 SYNOPSYS, INC. 发明人 PIERRAT, CHRISTOPHE
分类号 G03F1/00;G03F1/30;G03F7/20;H01L21/027 主分类号 G03F1/00
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