Group III nitride semiconductor crystal substrate and semiconductor device

摘要

A group III nitride semiconductor crystal substrate (20a) has a diameter of at least 25 mm and not more than 160 mm. The resistivity of the group III nitride semiconductor crystal substrate (20a) is at least 1 × 10 -4 ©·cm and not more than 0.1 ©·cm. The resistivity distribution in the diameter direction of the group III nitride semiconductor crystal (20a) is at least -30% and not more than 30%. The resistivity distribution in the thickness direction of the group III nitride semiconductor crystal (20a) is at least -16% and not more than 16%.