| 摘要 |
A compound semiconductor device including an electron transport layer (12) that is formed on a substrate and includes a III-V nitride compound semiconductor, a gate insulating film (17) that is positioned above the compound semiconductor layer, and a gate electrode (18) that is positioned on the gate insulating film. The gate insulating film includes a first insulating film (15, 26) that includes oxygen, at least a single metal element selected from a metal bonding with the oxygen and forming a metal oxide having a dielectric constant no less than 10, and at least a single metal element selected from Si and Al.
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