发明名称 |
Trench-gate MISFET |
摘要 |
A transistor structure optimizes current along the A-face of a silicon carbide body to form an AMOSFET that minimizes the JFET effect in the drift region during forward conduction in the on- state. The AMOSFET further shows high voltage blocking ability due to the addition of a highly doped well region that protects the gate corner region in a trench-gated device. The AMOSFET uses the A-face conduction along a trench sidewall in addition to a buried channel layer extending across portions of the semiconductor mesas defining the trench. A doped well extends from at least one of the mesas to a depth within the current spreading layer that is greater than the depth of the trench. A current spreading layer extends between the semiconductor mesas beneath the bottom of the trench to reduce junction resistance in the on-state. A buffer layer between the trench and the deep well further provides protection from field crowding at the trench corner. |
申请公布号 |
EP2068363(A2) |
申请公布日期 |
2009.06.10 |
申请号 |
EP20080170802 |
申请日期 |
2008.12.05 |
申请人 |
CREE, INC. |
发明人 |
ZHANG, QINGCHUN;AGARWAL, ANANT;JONAS, CHARLOTTE |
分类号 |
H01L29/04;H01L29/06;H01L29/08;H01L29/10;H01L29/24;H01L29/739;H01L29/749;H01L29/78 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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