COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A light emitting device using a compound semiconductor is provided to diffuse a current in an active layer uniformly by forming a current diffusion layer. A light emitting device includes a substrate(201), a compound semiconductor layer, and a current diffusion layer. The compound semiconductor layer is equipped on the substrate. The compound semiconductor layer includes an active layer(203). The current diffusion layer is equipped in at least one of the upper part and the lower part of the active layer. The current diffusion layer supplies the electrons or holes to the active layer uniformly. The current diffusion layer is made of III-V nitride semiconductor or II-VI oxide semiconductor.