Integrated circuit for use in e.g. memory module of electronic device, has middle layer arranged between upper solid electrolyte layer and lower solid electrolyte layer, where middle layer contains carbide compound

摘要

The integrated circuit has a conductive-bridge-resistive memory element (300) with an upper solid electrolyte layer (304) that contains a metal-doped glass material, where the glass material is partially amorphous. A lower solid electrolyte layer (308) contains the metal-doped glass material. A middle layer (306) is arranged between the upper and lower layers, where the middle layer contains a carbide compound. The carbide compound contains germanium carbide and silicon carbide. A glass material in the middle layer contains impurities such as carbon impurities and nitrogen impurities. The metal-doped glass material contains a germanium-selenide compound, germanium-sulfide compound, silicon-selenide compound, or silicon-sulfide compound. Independent claims are also included for the following: (1) a method for producing an integrated circuit (2) an information storing method.