A semiconductor device comprising nmos and pmos transistors with embedded si/ge material for creating tensile and compressive strain,申请号GB20090007494-传众专利搜索

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发明名称	A semiconductor device comprising nmos and pmos transistors with embedded si/ge material for creating tensile and compressive strain
摘要
申请公布号	GB0907494(D0)	申请公布日期	2009.06.10
申请号	GB20090007494	申请日期	2007.10.26
申请人	ADVANCED MICRO DEVICES, INC	发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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