THIN FLIM TRANSISTOR AND FABRICATING METHOD THEREOF

摘要

A thin film transistor and a manufacturing method thereof are provided to make the thickness of the insulating layer of the active layer lower part thin by forming an active layer in the first gate top portion of dielectric layer. A gate electrode(110) is formed on the substrate(100). A first gate insulating layer(130) is formed in the substrate upside while surrounding the gate electrode. An active layer(140) is formed in a domain corresponding to the gate electrode on the first gate insulating layer. The second gate insulating layer(150) is formed at the first gate top portion of dielectric layer while surrounding the active layer. A source electrode(160) and a drain electrode(170) are formed on top portion of the second gate dielectric layer with inter space. The passivation layer(180) is formed in upper part of the source electrode, the drain electrode and the active layer.