发明名称 |
Multi-layer source/drain stressor |
摘要 |
A method for forming a semiconductor device includes forming a recess in a source region and a recess in a drain region of the semiconductor device. The method further includes forming a first semiconductor material layer in the recess in the source region and a second semiconductor material layer in the recess in the drain region, wherein each of the first semiconductor material layer and the second semiconductor material layer are formed using a stressor material having a first ratio of an atomic concentration of a first element and an atomic concentration of a second element, wherein the first element is silicon and a first level of concentration of a doping material. The method further includes forming additional semiconductor material layers overlying the first semiconductor material layer and the second semiconductor material layer that have a different ratio of the atomic concentration of the first element and the second element.
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申请公布号 |
US7544997(B2) |
申请公布日期 |
2009.06.09 |
申请号 |
US20070676114 |
申请日期 |
2007.02.16 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
ZHANG DA;DHANDAPANI VEERARAGHAVAN;GOEDEKE DARREN V.;HILDRETH JILL C. |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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