发明名称 |
Bidirectional split gate NAND flash memory structure and array, method of programming, erasing and reading thereof, and method of manufacturing |
摘要 |
A split gate NAND flash memory structure is formed on a semiconductor substrate of a first conductivity type. The NAND structure comprises a first region of a second conductivity type and a second region of the second conductivity type in the substrate, spaced apart from the first region, thereby defining a channel region therebetween. A plurality of floating gates are spaced apart from one another and each is insulated from the channel region. A plurality of control gates are spaced apart from one another, with each control gate insulated from the channel region. Each of the control gate is between a pair of floating gates and is capacitively coupled to the pair of floating gates. A plurality of select gates are spaced apart from one another, with each select gate insulated from the channel region. Each select gate is between a pair of floating gates.
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申请公布号 |
US7544569(B2) |
申请公布日期 |
2009.06.09 |
申请号 |
US20060516431 |
申请日期 |
2006.09.05 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
GAO FENG;LIN YA-FEN;COOKSEY JOHN W.;CHEN CHANGYUAN;WIDJAJA YUNIARTO;LEE DANA |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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