| 摘要 |
<p>A method for manufacturing flash memory device is provided to shorten the process time and improve the productivity by performing the blanket etch process by using the hard mask film consisting of the amorphous carbon. A gate pattern including the drain select line(DSL) on the semiconductor substrate(100), a word line (WL), a source select line(SSL) and a gate line(GL) is formed. As to the drain select line(DSL) on the semiconductor substrate, the cell region and peripheral circuit region are defined. A hard mask film is formed on the above semiconductor of the substrate including the gate pattern. A junction region between the source select lines of the of the cell region and the junction region between drain select lines of the cell region are etched while etching the whole surface of the hard mask film. The ion injection process is performed to the side wall and bottom surface of etched junction regions.</p> |
