| 摘要 |
A semiconductor device is provided to suppress the concentration of leakage current in a corner part of the hetero bonding interface by supplying current to the end part of the hetero junction interface contacting with the gate insulating layer. A drift layer(2) is formed on the substrate region(1). In order to contact to the main surface facing the junction of the substrate region of the drift layer the hetero semiconductor region(3) is formed. The gate insulating layer(4) is formed in order to contact to the hetero bonding interface of the drift layer and hetero semiconductor region. The gate electrode(5) is formed on the gate insulating layer. The face to face facing the hetero bonding interface of the drift layer of the hetero semiconductor region, it is formed so that the source electrode(6) be connected ohmically through the contact hole (b). In the substrate region the drain electrode(7) is formed to be connected ohmically. An inter-layer insulating film(8) is formed in order to insulate the gate electrode and source electrode.
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