发明名称 Resistive memory device
摘要 A system having a memory cell. In certain embodiments, the memory cell includes a resistive memory element, an access transistor having a gate, a first terminal, and a second terminal, and a control transistor having a gate, a first terminal, and a second terminal. The first terminal of the access transistor may be coupled to the resistive memory element, and the gate of the access transistor may be coupled to the gate of the control transistor. Additionally, the first terminal of the control transistor may be coupled to the resistive memory element.
申请公布号 US7545669(B2) 申请公布日期 2009.06.09
申请号 US20080026701 申请日期 2008.02.06
申请人 MICRON TECHNOLOGY, INC. 发明人 LIU JUN;HUSH GLEN;VIOLETTE MIKE;INGRAM MARK
分类号 G11C11/00 主分类号 G11C11/00
代理机构 代理人
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