| 摘要 |
This invention is forming the DMOS channel after CMOS active layer before gate poly layer to make the modular DMOS process step easily adding into the sub-micron CMOS or BiCMOS process. And DMOS source is formed by implant which is separated by a spacer self-aligned to the window for DMOS body. By this method, the performance of CMOS and bipolar devices formed original CMOS or BiCMOS process keeps no change. The product design kit, such as standard cell library of CMOS and BiCMOS, can be used continuously with no change.
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