Circuit and method of driving sub-word lines of a semiconductor memory device

摘要

A circuit and method of driving a sub-word line of a semiconductor memory device capable of reducing power consumption is disclosed. The sub-word line driving circuit includes a first transistor, a second transistor and a third transistor. The first transistor pre-charges a boost node to a first voltage in response to a main word line driving signal. The second transistor boosts the boost node to a second voltage in response to a sub-word line driving signal, and provides the sub-word line driving signal to a sub-word line. The third transistor provides the main word line driving signal to the sub-word line in response to a third voltage that has a lower level than a logic "high" state of the sub-word line driving signal.