发明名称 |
Masks of semiconductor devices and methods of forming patterns thereof |
摘要 |
Disclosed are a mask of a semiconductor device and a method for forming a pattern thereof, which is capable of correcting a line width bias between a long line width and a short line width when a mask of a semiconductor transistor is formed. The mask may include a plurality of rectangular light shielding patterns formed on a mask disc on which gate line and contact holes are formed; and a connection pattern composed of a plurality of division patterns for selectively connecting the plurality of rectangular light shielding patterns one another. The plurality of rectangular light shielding patterns overlap with the contact hole mask and are formed on both sides of the connection pattern. The connection pattern is divided into 3 to 7 division patterns.
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申请公布号 |
US7544446(B2) |
申请公布日期 |
2009.06.09 |
申请号 |
US20040023276 |
申请日期 |
2004.12.27 |
申请人 |
DONGBU ELECTRONICS CO., LTD. |
发明人 |
LEE JUN SEOK |
分类号 |
G03F1/00;G03F1/14;G21K5/00;H01L21/027;H01L21/8242 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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