发明名称 |
Semiconductor devices having a trench in a side portion of a conducting line pattern and methods of forming the same |
摘要 |
A semiconductor device having a trench in the side portion of a conducting line pattern and methods of forming the same. The semiconductor device provides a way of preventing an electrical short between the conducting line pattern and a landing pad adjacent to the conducting line pattern. There are disposed two conducting line patterns on a semiconductor substrate. Each of the conducting line patterns includes a conducting line and a conducting line capping layer pattern stacked thereon. Each of the conducting line patterns has a trench between the conducting line capping layer pattern and the conducting line. Conducting line spacers are formed between the conducting line patterns. One conducting line spacer covers a portion of a sidewall of one of the conducting line patterns, and the remaining conducting line spacer covers an entire sidewall of the remaining conducting line pattern. A landing pad is disposed between the conducting line patterns.
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申请公布号 |
US7545046(B2) |
申请公布日期 |
2009.06.09 |
申请号 |
US20050267176 |
申请日期 |
2005.11.03 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NAM CHANG-HYEON;LEE SEUNG-KUN;CHOI JOONG-SUP;AHN CHANG-MOON;KANG WI-SEOB |
分类号 |
H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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