| 摘要 |
A voltage driver of a semiconductor memory device is provided to highly set first and second input voltage levels than threshold voltage levels of third and fourth transistors regardless of a change of a core voltage, thereby completely preventing an erroneous operation. A differential amplification circuit(110) amplifies and outputs a voltage difference between two input signals. A driver(140) drives a second voltage by using a first voltage according to an output signal of the differential amplification circuit. An input signal generator(130) distributes a voltage level corresponding to a difference between the first and second voltages, and generates one of the two input signals. An input signal generator includes distributed resistance. The distributed resistance is connected between a first voltage terminal and a second voltage terminal. |
